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一、引言随着InP光电器件的发展,尤其是长波长InGaAsP/InP异质结的光源器件和探测器的进展,对P型InP(InGaAsP)材料的欧姆接触特性的研究日益令人感到兴趣。以往的工作中广泛采用Au-Zn合金作为欧姆接触材料,该合金虽能使较低受主浓度的P-InP衬底或外延层形成欧姆接触电极,但它的缺点是与衬底的粘附性差易于剥落,而且它的接触电阻率也偏高(10~(-2)～10~(-3)Ω·cm~2)。本文目的是探索对P-InP新的欧姆接触材料,实验比较了Au-Zn、Ti-Au-Zn和
I. INTRODUCTION With the development of InP optoelectronic devices, especially the light source devices and detectors of long wavelength InGaAsP / InP heterojunction, the research on the ohmic contact characteristics of P-type InP (InGaAsP) materials is increasingly of interest. In the past work, Au-Zn alloy was widely used as an ohmic contact material. Although this alloy can form an ohmic contact electrode for the P-InP substrate or epitaxial layer with lower acceptor concentration, its disadvantage is that it is adhered to the substrate It is easy to peel off, and its contact resistivity is also high (10 ~ (-2) ~ 10 ~ (-3) Ω · cm ~ 2). The purpose of this paper is to explore a new ohmic contact material for P-InP. The experimental comparison between Au-Zn, Ti-Au-Zn and