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利用CVD蒸汽俘获法,在p+硅片上制备了垂直生长的n型ZnO纳米线阵列,用XRD和SEM分析了样品的结构与形貌。测试发现样品的I-V曲线符合典型的p-n异质结特性,正向开启电压为0.5 V,反向饱和电流为0.02 mA。计算了异质结的理想因子η,发现当异质结两端偏压在0 V~0.3 V的低压区域,理想因子为1.85,而在0.3 V~0.8 V的高偏压区域,理想因子为8.36。解释了理想因子偏高的原因是由于金属-半导体接触以及ZnO纳米线与p+-Si界面存在缺陷。
The vertical grown n-type ZnO nanowire arrays were prepared on p + silicon wafers by CVD vapor trapping method. The structure and morphology of the samples were analyzed by XRD and SEM. The test found that the I-V curve of the sample conformed to the typical p-n heterojunction characteristics with a forward turn-on voltage of 0.5 V and a reverse saturation current of 0.02 mA. The ideal factor η of the heterojunction is calculated and it is found that the ideal factor is 1.85 when the heterojunction is biased at a low voltage of 0 V to 0.3 V and the ideal factor is at a high bias of 0.3 V to 0.8 V 8.36. The reason that the ideal factor is high is explained because of the defects of the metal-semiconductor contact and the ZnO nanowire and the p + -Si interface.