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对吸附了大量As的InAs(001)样品进行升降温热处理,发现在485℃时表面有从(3×1)重构到(2×4)重构的不可逆转变现象。利用扫描隧道显微镜对(3×1)重构表面分析,结果表明大量常温吸附的As从表面脱附使InAs(001)(2×4)重构表面最顶层的As dimer也一起脱离表面,(3×1)重构表面实际上是由20%的富As(2×4)重构区域与80%的富In(4×2)重构区域组成。不可逆相变是由于As束流提供的As4原子团吸附到富In区域,使样品表面恢复到(2×4)重构相,而(2×4)重构相能在390~490℃温度范围内稳定存在。
The AsAs (001) sample with a large amount of As adsorbed was heated up and down, and the irreversible transition from (3 × 1) to (2 × 4) was observed at 485 ℃. Analysis of (3 × 1) reconstructed surface by scanning tunneling microscope showed that a large amount of as adsorbed As adsorbed on the surface of InAs (001) (2 × 4) 3 × 1) The reconstructed surface is actually composed of 20% rich As (2 × 4) reconstructed regions and 80% rich In (4 × 2) reconstructed regions. The irreversible phase transition is due to the fact that the As4 radicals provided by the As beam are adsorbed to the In-rich region and the surface of the sample is restored to the (2 × 4) reconstructed phase, while the (2 × 4) reconstructed phase is in the temperature range of 390 to 490 ° C Stable existence.