论文部分内容阅读
氧化镍薄膜因非挥发性、低功耗、开关重复性好及阻值窗口大等优势而成为广泛研究的阻变材料之一。本文从器件结构、阻变机理及影响因素等方面,综述了氧化镍薄膜阻变特性研究进展。结果表明:氧化镍薄膜阻变机理主要为金属细丝或空位细丝,但有关细丝形成条件仍无定论;引入PN结的夹层薄膜结构因形成界面缺陷可使开关比提高三个数量级到105;高价元素替位掺杂致薄膜内Ni0浓度增大而降低其阻变离散性;薄膜厚度及退火温度与时间可明显影响其阻变阈值电压。目前有关氧化镍薄膜阻变特性研究较多,下一步可将小尺度器件、低功耗及高密度集成纳米晶阻变特性作为研究方向,深入讨论其阻变机理。
Nickel oxide thin film due to non-volatile, low power consumption, good switching repeatability and large resistance window has become one of the widely studied resistance change materials. In this paper, the research progress of the resistance change characteristics of nickel oxide thin film is reviewed from the aspects of device structure, resistance change mechanism and influencing factors. The results show that the resistance change mechanism of nickel oxide film is mainly composed of metal filaments or vacant filaments, but the conditions of filament formation are still inconclusive. The interlayer film structure with PN junction can increase the switching ratio by three orders of magnitude to 105 due to the formation of interface defects ; The substitution of high-priced elements increases the concentration of Ni0 in the thin film and decreases the resistive-switching variability; and the film thickness and the annealing temperature and time can obviously affect the threshold voltage. At present, there are many researches on the resistivity change of the nickel oxide thin film. The next step is to study the resistance change mechanism of small scale devices, low power consumption and high density integrated nanocrystals.