采用x射线衍射分析和透射电镜观察,研究了硅-钛-硼掺杂金刚石在烧结过程中各物相的反应。随着烧结温度的升高,硅、钛分别与金刚石表面石墨化的碳反应生成SiC和TiC,硅与钛反应形成TiSi_2。在1500～1600℃,TiSi_2发生分解,新生的硅和钛与金刚石表面剩余的石墨反应生成相应的碳化物。通过金刚石颗粒间的碳化物的烧结,将金刚石粘结起来。 X-ray diffraction analysis and transmission electron microscopy were used to investigate the reaction of each phase in the Si-Ti-B doped diamond during sintering. With the increase of the sintering temperature, silicon and titanium react with the graphitized carbon on the diamond surface respectively to form SiC and TiC, and the reaction between silicon and titanium forms TiSi_2. At 1500-1600 ° C, TiSi_2 decomposes and the nascent silicon and titanium react with the remaining graphite on the diamond surface to produce the corresponding carbides. The diamond is bonded by the sintering of the carbide between the diamond grains.