用微电化学催化腐蚀法制备了硅纳米线阵列,通过扫描电镜(SEM)观察了样品的表面形貌。用荧光光谱仪测量了有序硅纳米线阵列的光致发光特性,发现当激发波长增加时,有序硅纳米线阵列的光致发光峰位单调红移,发光强度也单调增强。对比多孔硅的发光机理和现有实验条件,对有序硅纳米线阵列可能的发光机理进行了讨论。 Silicon nanowire arrays were prepared by microelectrochemical catalytic etching. The surface morphology of the samples was observed by scanning electron microscopy (SEM). The photoluminescence characteristics of ordered silicon nanowire arrays were measured by fluorescence spectroscopy. It was found that when the excitation wavelength was increased, the photoluminescence peaks of the ordered silicon nanowire arrays were monotonically red-shifted and the luminescence intensity was also monotonically enhanced. Comparing the luminescent mechanism of porous silicon with the existing experimental conditions, the possible luminescent mechanism of ordered silicon nanowire arrays is discussed.