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The evolution of the recrystallization phase in amorphous 6 H-SiC formed by He implantation followed by thermal annealing is investigated. Microstructures of recrystallized layers in 15 keV He~+ ion implanted 6 H-SiC(0001)wafers are characterized by means of cross-sectional transmission electron microscopy(XTEM) and high-resolution TEM. Epitaxial recrystallization of buried amorphous layers is observed at an annealing temperature of 900℃. The recrystallization region contains a 3 C-SiC structure and a 6 H-SiC structure with different crystalline orientations.A high density of lattice defects is observed at the interface of different phases and in the periphery of He bubbles.With increasing annealing to 1000℃, 3 C-SiC and columnar epitaxial growth 6 H-SiC become unstable, instead of[0001] orientated 6 H-SiC. In addition, the density of lattice defects increases slightly with increasing annealing.The possible mechanisms for explanation are also discussed.
The evolution of the recrystallization phase in amorphous 6 H-SiC formed by He implantation followed by thermal annealing is investigated. Microstructures of recrystallized layers in 15 keV He ~ + implanted 6 H-SiC (0001) wafers are characterized by means of cross- sectional transmission electron microscopy (XTEM) and high-resolution TEM. Epitaxial recrystallization of buried amorphous layers is observed at an annealing temperature of 900 ° C. The recrystallization region contains a 3 C-SiC structure and a 6 H-SiC structure with different crystalline orientations . A high density of lattice defects is observed at the interface of different phases and in the periphery of He bubbles. Increasing to 1000 ° C., 3 C-SiC and columnar epitaxial growth 6 H-SiC becomes unstable, instead of [0001] In addition, the density of lattice defects increases with increasing law. The possible mechanisms for explanation are also discussed.