研究了分子束外延中引入原子氢后 ,原子氢对外延层表面形貌特征形成的诱导作用 .原子力显微镜 (AFM)测试表明 ,在 (311) A Ga As表面 ,原子氢导致了台阶状形貌的形成 ,在这种台阶状表面进一步生长了 In As量子点 ,测试结果表明其位置分布的有序化受到台阶高度和台阶周期的制约 .这为实现量子点结构的有序化控制生长提供了一定的实验参考 . The introduction of atomic hydrogen into molecular beam epitaxy induced the formation of epitaxial layer by atomic hydrogen atomization.Anomic force microscopy (AFM) test showed that atomic hydrogen caused a step-like morphology on the (311) GaAs surface , The In As quantum dots are further grown on this stepped surface, and the test results show that the ordering of the position distribution is controlled by the step height and the step period, which provides for the orderly controlled growth of the quantum dot structure A certain experimental reference.