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在 MBE/CVD高真空系统上 ,利用低压化学气相淀积 ( L PCVD)方法在直径为 5 0 mm的单晶 Si( 10 0 )衬底上生长出了高取向无坑洞的晶态立方相碳化硅 ( 3 C- Si C)外延材料 ,利用反射高能电子衍射 ( RHEED)和扫描电镜( SEM)技术详细研究了 Si衬底的碳化过程和碳化层的表面形貌 ,获得了制备无坑洞 3 C- Si C/Si的优化碳化条件 ,采用霍尔 ( Hall)测试等技术研究了外延材料的电学特性 ,研究了 n- 3 C- Si C/p- Si异质结的 I- V、C- V特性及 I- V特性对温度的依赖关系 .室温下 n- 3 C- Si C/p- Si异质结二极管的最大反向击穿电压达到 2 2 0 V,该 n- 3 C- Si C/p- Si异质结构可用于制备宽带隙发射极 Si C/Si HBTs器件
On the MBE / CVD high-vacuum system, a highly oriented non-pitted crystalline cubic phase was grown on a single-crystal Si (100) substrate with a diameter of 50 mm by a low pressure chemical vapor deposition (LPCVD) Silicon carbide (3 C-Si C) epitaxial material was synthesized and characterized by RHEED and SEM techniques. The carbonization process and surface morphology of the Si substrate were investigated in detail. 3 C Si C / Si carbonization conditions optimization, the use of Hall test techniques to study the electrical properties of epitaxial materials, n-3 C- Si C / p-Si heterojunction I- V, C-V characteristics and the dependency of the I-V characteristics on temperature. The maximum reverse breakdown voltage of n-3 C-Si C / p-Si heterojunction diodes at room temperature reaches 220 V, - Si C / p-Si heterostructures can be used to prepare wide bandgap emitter Si C / Si HBTs devices