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比较了淬火无序态（Ｃｏ_（７８）Ｆｅ_（２２））_３Ｖ在经过冷加工后退火和未经冷加工直接退火两种情况下的显微组织，发现在无序－有序转变过程中出现的晶体缺陷和有序态下（再结晶晶粒内）出现的晶体缺陷不同。前者主要是广泛的反相畴界网络，后者主要是大量的内禀层错和孪晶。实验结果表明，有序态下超点阵内禀层错（ＳＩＳＦ）能比反相畴界（ＡＰＢ）能低得多。无序－有序转变过程中出现的位移矢量为１／６＜１１２＞的层错（ＳＦ）通过和ＡＰＢ反应转变成ＳＩＳＦ，可以在有序化后保持稳定；在引入大量位错的情况下，位错分解为层错并与反相畴界反应，生成密集的ＳＩＳＦ层错四面体胞群，在７２０℃，４８ｈ退火后仍保持约５０ｎｍ的细小尺寸。
The microstructures of quenched disordered (Co_ (78) Fe_ (22)) _3V annealed after cold working and direct annealed without cold working were compared. It was found that the crystal appearing in the disordered-ordered transition Defects and ordered states (recrystallized grains) appear different crystal defects. The former is mainly a wide range of anti-phase boundary network, which is mainly a large number of intrinsic layer faults and twins. The experimental results show that the superlattice intrinsic layer fault (SISF) can be much lower than the inverting boundary (APB) in an ordered state. Disorderly-ordered transitions with a displacement vector of 1/6 <112>, strata faults (SF), are converted into SISFs by reaction with APBs and can remain stable after ordering; with the introduction of a large number of dislocations , The dislocations are decomposed into layer faults and react with anti-phase boundaries to form dense SISF stacking tetrahedron cells, which remain in the small size of about 50 nm after being annealed at 720 ° C. for 48 hours.