通过实验在室温下同时测量纳米MOSFET器件样品漏源电流和栅电流的低频噪声,发现一些样品器件中漏源电流不存在明显的RTS噪声,而栅电流存在显著的RTS噪声,而且该栅电流RTS噪声俘获时间随栅压增大而增大,发射时间随栅压增大而减小的特点,复合陷阱为库伦吸引型陷阱的特点.根据栅电流RTS噪声的时常数随栅压及漏压的变化关系,提取了吸引型氧化层陷阱的深度、在沟道中的横向位置和陷阱能级等信息. By testing the low-frequency noise of the drain-source current and the gate current at the same time, we found that there is no obvious RTS noise in the drain-source current and some significant RTS noise in the gate current of some sample devices. Furthermore, the RTS current The noise trapping time increases with the increase of gate voltage and the emission time decreases with the increase of gate voltage.The compound trap is the characteristic of Coulomb attraction trap.According to the time constant of gate current RTS noise with gate voltage and drain voltage The relationship between the depth of the attracting oxide trap, the horizontal position in the channel and the trap level is extracted.