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采用湿化学刻蚀法直接在n-Si衬底上制备了硅纳米线(Si NWs),用无电镀法在制备好的硅纳米线上修饰Pt纳米粒子作为上电极以形成结构为Pt/Si NWs/n-Si/Al的肖特基二极管。研究了无电镀参数(如氯铂酸钾K2PtCl6浓度,无电镀时间)对结构为Pt/Si NWs/n-Si/Al的肖特基二极管电流-电压的影响。从所得的电流-电压特性曲线中提取了肖特基二极管的三个特征参数(理想因子、势垒高度以及串联电阻),并分析了这三个特征参数与无电镀参数的关系,从而确定了一个制备结构为Pt/Si NWs/n-Si/Al肖特基二极管的理想条件。研究还发现所制备的肖特基二极管理想因子大于1,势垒高度～0.67eV,与金属铂(Pt)的功函数无关,这些特性可以用巴丁模型来解释。
Silicon nanowires (Si NWs) were prepared directly on n-Si substrate by wet chemical etching. Pt nanoparticles were modified on the prepared silicon nanowires by electroless plating as the upper electrode to form the structure of Pt / Si NWs / n-Si / Al Schottky diode. The effects of electroless parameters (such as K2CrCl6 concentration and electroless plating time) on the current-voltage of Schottky diode with Pt / Si NWs / n-Si / Al structure were investigated. Three characteristic parameters (ideal factor, barrier height and series resistance) of the Schottky diode are extracted from the obtained current-voltage characteristic curve, and the relationship between the three characteristic parameters and the electroless plating parameter is analyzed, so as to determine An ideal condition for the fabrication of Pt / Si NWs / n-Si / Al Schottky diodes is proposed. The study also found that the idealized Schottky diode is greater than 1, and the barrier height is ~ 0.67eV, which is independent of the work function of platinum (Pt). These properties can be explained by the Barden model.