采用超高真空电子束蒸发方法在硅单晶衬底上制备了Ｃｏ／Ｃｕ／Ｃｏ 三明治膜，研究了衬底晶向、过渡层材料和生长室温度对三明治膜中巨磁电阻效应的影响；结合原子力显微镜表面形貌观察，探讨了三明治膜表面（ 界面）粗糙度与其巨磁电阻效应的内在关系；还分析了三明治膜经高温热退火后巨磁电阻效应退化的物理机制。 Co / Cu / Co sandwich films were fabricated on silicon single crystal substrates by ultra-high vacuum electron beam evaporation. The effect of substrate orientation, transition layer material and growth chamber temperature on giant magnetoresistance effect in sandwich films was investigated. Combined with the observation of the surface morphology of AFM, the inner relationship between the surface roughness of the sandwich membrane and the GMR effect was discussed. The physical mechanism of the GMR resistance degradation after the high temperature thermal annealing of the sandwich membrane was also analyzed.