美国海军研究实验所发明了一种制作新颖薄膜——掺锑的发光薄膜和半导体薄膜——的方法。用此法制作薄膜价格比较便宜,而且效率大为提高。这些薄膜可供发光面板显示器和微电子电路使用。这项技术实施时,是在五氟化锑与几个卤素分子之间通过辐照由普通氙灯射出的紫外线,引起气相电离反应。这种紫外线射向衬底表面的薄膜中央,选择性地使气体凝聚。若使用紫外激光束,该项 The United States Naval Research Laboratory invented a novel film - antimony-doped light-emitting films and semiconductor films - the method. Films made with this method are cheaper and more efficient. These films are available for light-emitting panel displays and microelectronic circuits. This technique was implemented by irradiating ultraviolet rays emitted by ordinary xenon lamps between antimony pentafluoride and several halogen molecules and causing gas phase ionization reaction. This ultraviolet light is directed toward the center of the film on the surface of the substrate to selectively condense the gas. If using UV laser beam, this item