4H-SiC晶体经能量为100keV,剂量为3×1016cm-2的氦离子高温(500K)注入后,再在773—1273K温度范围内进行了退火处理,最后使用纳米压痕仪测量了样品注入面的硬度.测试结果表明,在500—1273K温度范围内样品的硬度随退火温度升高呈现先增大后减小再增大的趋势,其中773K退火样品的硬度增大明显.分析认为,退火样品的硬度变化是由退火过程中缺陷复合与氦泡生长导致样品内部的Si—C键密度、键长和键角改变引起的. The 4H-SiC crystal was annealed in the temperature range of 773-1273K after the high-temperature (500K) He-ion implantation at 100keV and 3 × 1016cm-2 was performed. Finally, The results show that the hardness of samples increases first, then decreases and then increases with the increase of annealing temperature in the temperature range of 500-1273K, and the hardness of samples annealed at 773K increases obviously.The analysis shows that the samples annealed The change of hardness is caused by the change of Si-C bond density, bond length and bond angle caused by the growth of defect recombination and helium bubble during annealing.