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Direct-current transfer characteristics of(In GaN)/AlGaN/AlN/GaN hetcrojunction field effect transistors(HFETs)are presented.A drain current plateau(Ids = 32.0 mA/mm) for Vgs swept from +0.7 V to-0.6 V is present in the transfer characteristics of InGaN/AlGaN/AlN/GaN HFETs.The theoretical calculation shows the coexistence of two-dimensional electron gas(2DEG) and two-dimensional hole gas(2DHG) in InGaN/AlGaN/AlN/GaN heterostructures,and the screening effect of 2DHG to the 2DEG in the conduction channel can explain this current plateau.Moreover,the current piateau shows the time-dependent behavior when I_(DS)-V_(GS) scans repeated are conducted.The obtained insight provides indication for the design in the fabrication of GaN-based super HFETs.
Direct-current transfer characteristics of (In GaN) / AlGaN / AlN / GaN hetcrojunction field effect transistors (HFETs) are presented. A drain current plateau (Ids = 32.0 mA / mm) for Vgs swept from +0.7 V to-0.6 V is present in the transfer characteristics of InGaN / AlGaN / AlN / GaN HFETs. The theoretical calculation shows the coexistence of two-dimensional electron gas (2DEG) and two-dimensional hole gas (2DHG) in InGaN / AlGaN / AlN / GaN heterostructures, and the screening effect of 2DHG to the 2DEG in the conduction channel can explain this current plateau. Moreover, the current piateau shows the time-dependent behavior when I_ (DS) -V_ (GS) scans repeated are conducted. The obtained insights provides indication for the design in the fabrication of GaN-based super HFETs.