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The fabrication and characterization of 1700 V 7A 4H-SiC vertical double-implanted metal-oxide-semiconductor field-effect transistors(VDMOSFETs) are reported.The drift layer is 17 μm in thickness with 5 × 10~(15) cm~(-3)n-type doping,and the channel length is 1 μm.The MOSFETs show a peak mobility of 17cm~2/V·s and a typical threshold voltage of 3 V.The active area of 0.028 cm~2 delivers a forward drain current of 7 A at V_(GS) = 22 V and V_(DS) = 15 V.The specific on-resistance(R_(on,sp)) is 18mΩ·cm~2 at V_(GS) = 22 V and the blocking voltage is 1975 V(I_(DS) < 100 nA) at V_(GS) =0 V.
The fabrication and characterization of 1700 V 7A 4H-SiC vertical double-implanted metal-oxide-semiconductor field-effect transistors (VDMOSFETs) are reported. The drift layer is 17 μm in thickness with 5 × 10 ~ (15) cm ~ 3) n-type doping, and the channel length is 1 μm. The MOSFETs show a peak mobility of 17 cm ~ 2 / V · s and a typical threshold voltage of 3 V. The active area of 0.028 cm ~ 2 delivers a forward drain current of 7 A at V GS = 22 V and V DS = 15 V. The specific on-resistance (R on (sp)) is 18 mΩ · cm 2 at V GS = 22 V and the blocking voltage is 1975V (I_ (DS) <100 nA) at V_ (GS) = 0V.