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日立公司最近研究出一种制备均匀半绝缘GaAs单晶的新方法.方法是在一般LEC拉晶装置的坩埚上方装一个石英储As器,储As器外绕辅助加热器,加热器和储As器均可上、下移动将大约1公斤的Ga、As混合物置于坩埚内,高压原位直接合成GaAs后,立即将储As器中As(30～50g)徐徐注入GaAs熔体,直至拉晶过程结束.这种方法可使拉晶过程中熔体组成保持化学计量比(0.497～0.501).最后获得的结果是:
Hitachi recently developed a new method for preparing uniform semi-insulating GaAs single crystals by placing a quartz reservoir As above the crucible of a conventional LEC crystal pulling device, bypassing an auxiliary heater, heater and storage As Can move up and down about 1 kg of Ga, As mixture placed in the crucible, high pressure in situ synthesis of GaAs, immediately As As As (30 ~ 50g) into the Ga As melt slowly until the crystal The end of the process. This method allows the crystal pulling process to maintain the stoichiometric melt composition (0.497 ~ 0.501). The final result is: