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本文应用Sol－Gel方法制备了YSZ薄膜，研究了工艺条件对薄膜微观结构的影响.实验发现：基片的选择和清洁、样品的凝胶化速度、热处理过程中的升降温速率等是影响薄膜开裂的几个主要因素．XRD和SEM分析结果表明：应用Sol－Gel方法制备的YSZ薄膜，热处理温度须达800℃以上才能完全排除其中的酸根、有机基因和碳元素，且形成完整的立方相结构．薄膜经500℃、1h热处理后，其表面呈明显的海绵状结构．随着烧结温度的升高，薄膜表面变得致密，气孔明显减少，至1050℃时，薄膜表面光滑、无裂纹、无针孔、圆球形的小颗粒均匀分布．薄膜与衬底的结合紧密，薄膜厚度均匀，膜厚约为1.0μm.
In this paper, YSZ thin films were prepared by Sol-Gel method, and the influence of process conditions on the microstructure of the films was studied. The results showed that: the selection and cleaning of substrates, the gelation speed of samples, the heating and cooling rate during heat treatment Cracking several major factors. The results of XRD and SEM show that the YSZ thin films prepared by Sol-Gel method must be heat-treated at a temperature above 800 ℃ to completely eliminate the acid radical, organic gene and carbon element and form a complete cubic phase structure. After 500 ℃, 1h heat treatment, the surface of the film showed a sponge-like structure. With the increase of the sintering temperature, the surface of the film became dense and the porosity decreased obviously. The surface of the film was smooth and crack-free at 1050 ℃. No pinholes and spherical particles were uniformly distributed. The combination of the film and the substrate is close, the film thickness is uniform, and the film thickness is about 1.0 μm.