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利用AES,XRD,UPS,XPS等技术研究了(0-1000A)Cr-Si(111),(100)系统在不同真空条件,不同温度热处理和不同Si表面状态下,铬硅化物的形成及其界面反应演化问题。在一定条件下,铬硅化物的形成规律为:Cr/Si→CrSi_2→CrSi,其中CrSi_2是一个亚稳相。Cr-Si界面在室温下的反应演化过程是:金属Cr/富Cr相(2—4A)/Cr-Si互混相(～10A)/富Si相(～2A)/Si。Cr-Si界面只有加热后才能形成确定化学配比的硅化物。形成各种硅化物的条件除与退火温度,真空条件有关外,还与覆盖度θ,硅表面状态和热处理时间有关。对于Cr—Si界面及铬硅化物的电子性质也进行了讨论。
The formation of chromium silicide in (0-1000A) Cr-Si (111), (100) system under different vacuum conditions, different temperature heat treatments and different Si surface states was studied by using AES, XRD, UPS and XPS techniques. Interface reaction evolution problem. Under certain conditions, the formation of chromium silicide is: Cr / Si → CrSi_2 → CrSi, of which CrSi_2 is a metastable phase. The reaction evolution of the Cr-Si interface at room temperature is: Cr / Cr rich phase (2-4A) / Cr-Si mixed phase (~ 10A) / Si rich phase (~ 2A) / Si. Cr-Si interface only heated to form a certain chemical composition of silicide. In addition to forming a variety of silicide conditions and annealing temperature, vacuum conditions, but also with the coverage θ, silicon surface conditions and heat treatment time. The electronic properties of the Cr-Si interface and chrome silicide are also discussed.