论文部分内容阅读
研究了在直拉单晶硅和铸造多晶硅中经 110 0℃热处理快冷或慢冷条件下所形成的铁沉淀规律及其对少数载流子扩散长度的影响 .红外扫描仪照片显示在直拉单晶硅中慢冷却形成的铁沉淀密度较低 ,而且其尺寸较大 ;在铸造多晶硅中 ,铁易在晶界上沉淀 ,沉淀规律也依赖于冷却速度 .表面光电压仪测试结果表明 :无论在直拉单晶硅材料中还是在铸造多晶硅材料中 ,快冷形成的铁沉淀对少数载流子扩散长度影响更大 .实验结果可以用铁沉淀生成的热力学和动力学规律解释
The effect of iron deposition on the diffusion length of minority carriers formed by rapid cooling or slow cooling at 110 0 ℃ in Czochralski (CZT) and foundry polycrystalline silicon was investigated. Slow cooling formed in monosilicon iron deposition density is lower, and its larger size; In the casting of polycrystalline silicon, iron easily precipitated in the grain boundary, precipitation law also depends on the cooling rate. Surface photovoltage instrument test results show that: both in In Czochralski (CZ) or in the casting of polycrystalline silicon (CZ), rapid precipitation of iron precipitates has a greater effect on minority carrier diffusion length.The experimental results can be explained by the thermodynamics and kinetics of iron precipitation