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本文分析了Ga_(0.47)In(0.53)As材料生长中影响材料组分变化的因素,简要地给出了生长合适组分外延层的料源配制公式及其应用结果.采用适当的生长工艺可使外延层的横向组分平均偏离控制在±1.0%以内,纵向组分平均偏离在±1.4%以内,一源多炉生长的炉间外延层组分的平均偏离在±2%以内.分凝系数测量结果说明:三元层的生长主要是与组分的扩散密切有关,而与生长界面的动力学因素关系不太紧密.
In this paper, the factors that affect the composition of Ga_ (0.47) In (0.53) As materials are analyzed, and the formula of material source for the growth of suitable epitaxial layers and its application results are given briefly. The appropriate growth process The average deviation of the horizontal component of the epitaxial layer within ± 1.0% and the average deviation of the longitudinal component within ± 1.4%, the average deviation of the component of the intergranular epitaxial layer grown in the multi-source furnace within ± 2%. Coefficient measurement results show that the growth of ternary layer is mainly related to the diffusion of components, but not to the dynamics of growth interface.