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借助于最好的绝缘材料-空气所填充的V形腐蚀槽,垂直-各向异性腐蚀工艺缩短了器件的隔离间距,并制出了1024位的双极随机存取存储器,预计将来还会有更高的存储位密度。
With the best insulating materials - V-shaped grooves filled with air, vertical-anisotropic etching process to shorten the isolation distance of the device and made a 1024-bit bipolar random access memory is expected in the future there will be Higher storage bit density.