论文部分内容阅读
采用包埋法在C/C基体上制备了SiC涂层,借助X射线衍射仪(XRD)和扫描电镜(SEM)对涂层的相组成及微观形貌进行了观察和分析,研究了涂层在1500℃静态空气中的氧化行为,并进一步阐述了涂层的抗氧化机制。结果显示:包埋法制备的涂层由α-SiC、β-SiC及游离Si组成,经XRD半定量分析得到不同工艺制备的涂层中游离Si含量不同;游离Si含量越高涂层越致密;氧化性能显示涂层中适量的游离Si有利于涂层的抗氧化,当涂层中游离Si质量分数为1.3%和2.9%时其抗氧化性能均较好,在1500℃静态空气中氧化7h失重率分别为0.19%和0.16%。
SiC coating was prepared on C / C substrate by embedding method. The phase composition and the morphology of the coating were observed and analyzed by X-ray diffraction (XRD) and scanning electron microscopy (SEM) The oxidation behavior in static air at 1500 ℃, and further elaborates the anti-oxidation mechanism of the coating. The results show that the coatings prepared by embedding method are composed of α-SiC, β-SiC and free Si. The semi-quantitative analysis by XRD shows that the content of free Si in the coatings prepared by different processes is different. The higher the content of free Si, ; The oxidation performance showed that the amount of free Si in the coating was good for the anti-oxidation of the coating. When the content of free Si in the coating was 1.3% and 2.9%, the anti-oxidation properties were better and oxidized in static air at 1500 ℃ for 7h Weight loss rates were 0.19% and 0.16% respectively.