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本文利用扫描电镜(SEM)对1.3μmInGaAsP/InP DHLED的电学特性参数进行了分析。对影响输出功率的诸因素进行了理论分析和数学计算,绘出了一套曲线,并大量观测了p-n结结位、有源层厚度和均匀性对输出功率和上升时间的影响。本文首次利用扫描电镜的电子束感生电流(EBIC)信号对DHLED中InGaAsP有源层的少子扩散长度进行非破坏性的测量、计算。编拟了专用计算程序“DLSEM”,使这项测量工作实现了快速、简便和精确。
In this paper, the scanning electron microscopy (SEM) of 1.3μmInGaAsP / InP DHLED electrical characteristics of the parameters were analyzed. The factors affecting the output power are theoretically analyzed and mathematically calculated. A set of curves are plotted and the effects of p-n junction, active layer thickness and uniformity on output power and rise time are observed. In this paper, the electron-beam induced current (EBIC) signal of scanning electron microscope (SEM) is used for the first time to measure and calculate the non-destructive length of the minority diffusion of InGaAsP active layer in DHLED. A dedicated calculation program “DLSEM” has been prepared to make this measurement fast, easy and accurate.