研究了采用高分辨率的100 kV电子束光刻和光学光刻系统相结合制作高线密度X射线双光栅的工艺技术,并且分析了电子束邻近效应校正技术在高线密度光栅制备中的应用。首先,利用电子束曝光和纳米电镀技术在同一衬底上制备两种不同线密度光栅图形;然后,利用光学光刻在2 000 lp/mm光栅上制备了自支撑加强筋结构。通过此技术制备的X射线双光栅成功集成了高线密度5 000 lp/mm透射光栅和2 000 lp/mm自支撑透射光栅,其栅线宽度分别为100和250 nm,金吸收体厚度达到400 nm。 The technology of producing high linear density X-ray double grating by using 100 kV electron beam lithography with high resolution and optical lithography system was studied. The application of the electron beam proximity correction technique in the preparation of high linear density grating . First, two different linear density grating patterns were prepared on the same substrate by using electron beam lithography and nano-plating technique. Then, a self-supporting stiffener structure was prepared by photolithography on a 2,000 lp / mm grating. The X-ray double grating fabricated by this technique successfully integrated a high linear density of 5000 lp / mm transmission grating and a 2000 lp / mm self-supporting transmission grating with gate widths of 100 and 250 nm, gold absorber thickness of 400 nm.