论文部分内容阅读
The properties of the passivation film formed on 316L stainless steel were studied by Electrochemical Impedance Spectroscopy(EIS),Mott-Schottky and Voltammetry measurements in high- temperature acetic acid.The results show that the passivation film formed on 316L stainless steel is stable in 60% acetic acid solution from 25℃to 85℃.As temperature increased,the polarization resistance decreased but the interface capacitance increased.There was hardly any relation between temperature and the intrinsic property semiconductor.The passivation film represents the p-semiconductor property in the potential interval of-0.5-0.1 V;represents the n-semiconductor property in the potential interval of 0.1-0.9 V;and represents the p-semiconductor property in the potential interval of 0.9-1.1 V.The voltammetry measurements show that the structure of the passivation film is stable when the temperature is lower than 55℃ and that its stability decreased when this temperature is exceeded.
The properties of the passivation film formed on 316L stainless steel were studied by Electrochemical Impedance Spectroscopy (EIS), Mott-Schottky and Voltammetry measurements in high- temperature acetic acid. The results show that the passivation film formed on 316L stainless steel is stable in 60 % acetic acid solution from 25 ° C to 85 ° C. As temperature increased, the polarization resistance decreased but the interface capacitance increased. Here was was any relation between temperature and the intrinsic property semiconductor. The passivation film represented the p-semiconductor property in the potential Intermittent of-0.5-0.1 V; for the n-semiconductor property in the potential interval of 0.1-0.9 V; and for the p-semiconductor property in the potential interval of 0.9-1.1 V. The voltammetry measurements show that the structure of the passivation film is stable when the temperature is lower than 55 ° C and that its stable decreased when this temperature is exceeded.