本文对VHSI和VLSI所必需的微细多层布线技术进行了研究。选取聚酰亚胺作为层间介质膜,开发出能形成3μm良好通孔的等离子腐蚀和湿腐蚀法,采用原位物理清除技术从根本上克服了接触电阻的难题。在3μm3层布线场合,R_c≤0.1Ω/孔,布线通孔成品率高于99.99％。本项技术业已实际应用,效果满意。 This article has studied the micro-multilayer wiring technology necessary for VHSI and VLSI. Polyimide was selected as an interlayer dielectric film to develop a plasma etching and wet etching method which can form a good through-hole of 3 μm. The in-situ physical removal technique fundamentally overcomes the problem of contact resistance. In 3μm3 layer wiring occasions, R_c≤0.1Ω / hole, wiring through hole yield of more than 99.99%. This technology has been practical application, the effect is satisfactory.