日本丰田技术学院的研究人员找到了一种方法,使得硅集成电路在汽车发动机内仍能可靠地工作,而那里的温度常超过300℃。他们的方法很简单,用与普通晶体管相反的顺序制造这些晶体管。普通晶体管的主要问题是在高温下耗散电流增大,击穿电压降低,这是由于集电极区和基片间势垒造成的,使得最大工作温度不能超过120℃。用相反的顺序制造晶体管,将集电极与基片隔离,带有高浓度载流子 Researchers at Japan’s Toyota Technology Institute have found a way to make silicon-based integrated circuits work reliably in automotive engines, where temperatures often exceed 300 ° C. Their approach is simple, making these transistors in the reverse order of normal transistors. The main problem of ordinary transistors is that the dissipation current increases at high temperatures and the breakdown voltage decreases due to the potential barrier between the collector region and the substrate so that the maximum operating temperature can not exceed 120 ° C. Transistors are fabricated in the reverse order, isolating the collector from the substrate, with a high concentration of carriers