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无位错硅单晶的悬浮区熔法制备众所周知,用悬浮区熔法制作硅单晶比直拉法有许多优点:不受坩埚材料等的污染,纯度高,只含微量所需要的氧、碳等杂质。但对于结晶缺陷,特别是位错、线性老化(lineage)等缺陷却很难去除和控制。而由于最近技术的不断进步,已有可能用悬浮区熔法培育相当大直径的无位错单晶。并已有许多研究者不断发表文献,指出无位错硅单晶的生长条件为: (1)防止由籽晶引起的位错传布; (2)使长成的晶体中未产生新的位错
Displacement-free silicon single crystal suspended zone melting method It is well-known that the production of silicon single crystal by suspension zone melting method has many advantages over Czochralski method: free from contamination of the crucible material, high purity, containing only trace amounts of oxygen, Carbon and other impurities. But for the crystal defects, especially dislocations, linear aging and other defects is very difficult to remove and control. Due to recent advances in technology, it has been possible to grow quite large diameter dislocation-free single crystals by the levitation melting method. And there are many researchers continue to publish the literature, pointed out that the growth of dislocation-free silicon single crystal growth conditions: (1) to prevent dislocation caused by the seed spread; (2) to grow the crystal did not produce new dislocations