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硅基键合Ⅲ-Ⅴ材料激光器,作为互补氧化物半导体(CMOS)兼容硅基光互连系统中的一个关键元件,近年来引起了人们的高度重视并得到了广泛的研究。金属限制结构可以增强器件对光场的限制,提高界面反射率和工艺容差,从而实现小体积低能耗硅片上集成光源。对金属限制介质辅助键合Ⅲ-Ⅴ/硅基混合集成激光器进行了研究,介绍了该激光器的基本原理和实验方案,并对制作的不同结构激光器的特性进行了分析,该研究工作的开展将有助于实现Ⅲ-Ⅴ/硅基混合集成激光器在低能耗高带宽的硅基光互连中的应用。
Silicon-based bonded III-V material lasers, as key components in CMOS-compatible silicon-based optical interconnection systems, have attracted much attention and been extensively studied in recent years. The metal confinement structure can enhance the restriction of the light field of the device and improve the interface reflectivity and the process tolerance so as to realize the integrated light source on the small volume and low energy silicon. The metal-assisted medium assisted bonding III-Ⅴ / Si hybrid laser was studied. The basic principle and experiment scheme of the laser were introduced. The characteristics of the fabricated laser with different structures were analyzed. It is helpful to realize the application of Ⅲ-Ⅴ / Si-based hybrid integrated lasers in low power and high bandwidth silicon-based optical interconnects.