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利用X射线动力学衍射的结果,通过GaAs单晶Ga、As的K-吸收限特性在带有单晶附件的X射线衍射仪上测定GaAs单晶外延层薄膜厚度。
The thickness of the GaAs single crystal epitaxial layer was measured on the X-ray diffractometer with a single crystal attachment by the K-absorption-limited properties of GaAs single crystals Ga and As using X-ray dynamic diffraction results.