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报导了用光学透射比法在外延单晶薄膜上进行InP及In_(0.53)Ga_(0.47)As材料吸收光谱测定的实验结果,对单层及双层材料样品两种情形分别讨论了透射比T(λ)与吸收系数α(λ)之间的理论关系;并描述了使用异质结外延材料与选择腐蚀工艺制备单晶薄膜样品的方法。对获得的实验结果进行了理论分析与解释,并与其他作者的研究结果进行了比较。
The experimental results of the absorption spectra of InP and In_ (0.53) Ga_ (0.47) As on the epitaxial single crystal films by optical transmittance method are reported. The transmission T (λ) and the absorption coefficient α (λ). A method of fabricating a single crystal thin film sample using a heterojunction epitaxial material and a selective etching process is also described. The experimental results obtained are analyzed and explained theoretically, and compared with the results of other authors.