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研究了不同 n~+层到栅之间的间隙对 GaAsn~+栅自对准 MESFET 的短沟道效应。栅长范围从0.1到1.5μm。制造特点是对 n~+层用自对准离子注入技术(SAINT)和电子束直接刻写。n~+层到栅之间的问隙是由充当n~+离子注入掩模的多层抗蚀剂的底层钻蚀过程控制的。研究表明短沟道效应如亚阈电流增加和阈电压负漂移,可扩大 n~+层到栅之间的间隙从0.15到0.3μm 而显著缓和。
The short channel effects of GaAsn ~ + gate self-aligned MESFETs with different n + layers to gate gaps were investigated. The gate length ranges from 0.1 to 1.5 μm. Manufacturing features are n + layer using self-aligned ion implantation (SAINT) and electron beam direct writing. The n + layer to gate scratch gap is controlled by the underlying drilling process of a multilayer resist that acts as an n + ion implant mask. Studies have shown that short-channel effects such as subthreshold current increase and threshold voltage negative drift can significantly widen the gap between the n + layer and the gate from 0.15 to 0.3 μm.