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报道用开管汽相外延法生长长波碲镉汞晶膜的结果。实验表明,用这种方法容易得到适合红外焦平面列阵器件制备用的大面积均匀优质碲镉汞晶膜。
Reported the use of open-tube vapor phase epitaxial growth of CdTe HgCdTe crystal film results. Experiments show that this method is easy to obtain suitable for the preparation of infrared focal plane array device for the preparation of a large area uniform quality mercury cadmium telluride film.