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测量了ZnO-TiO2-Bi2O3-CuO-Co2O3,ZnO-TiO2-Bi2O3-CuO-Cr2O3,ZnO-TiO2-Bi2O3-CuO-MnO2和ZnOTiO2-Bi2O3-CuO-MnO2-Co2O3-Cr2O3压敏陶瓷的正电子寿命谱及其电性能参数。研究了MnO2、Co2O3和Cr2O3掺杂对ZnO-TiO2-Bi2O3-CuO压敏陶瓷电子密度和电性能的影响。实验发现:ZnO-TiO2-Bi2O3-CuOCr2O3压敏陶瓷基体和晶界缺陷态的电子密度均最高,其压敏电压最低;ZnO-TiO2-Bi2O3-CuO-MnO2压敏陶瓷晶界缺陷态的电子密度最低,其压敏电压比前者高;ZnO-TiO2-Bi2O3-CuO-Co2O3压敏陶瓷基体(晶粒内)的电子密度最低,其压敏电压较高;而ZnO-TiO2-Bi2O3-CuO-MnO2-Co2O3-Cr2O3压敏陶瓷基体和晶界缺陷态的电子密度均较低,其压敏电压VT和非线性系数ɑ最高,漏电流IL最小。
The positron lifetime of ZnO-TiO2-Bi2O3-CuO-Co2O3, ZnO-TiO2-Bi2O3-CuO-Cr2O3, ZnO-TiO2-Bi2O3-CuO-MnO2 and ZnOTiO2-Bi2O3-CuO-MnO2-Co2O3- Spectrum and its electrical performance parameters. The effects of MnO2, Co2O3 and Cr2O3 doping on the electron density and electrical properties of ZnO-TiO2-Bi2O3-CuO varistor ceramics were investigated. The experimental results show that the ZnO-TiO2-Bi2O3-CuOCr2O3 varistor ceramics have the highest voltage densities and the lowest densitivities in the grain boundary defects. The electron densities of ZnO-TiO2-Bi2O3-CuO- The voltage-sensitive voltage of ZnO-TiO2-Bi2O3-CuO-Co2O3 is the lowest, and its voltage-sensitive voltage is higher than ZnO-TiO2-Bi2O3-CuO-Co2O3 The electron density of the -Co2O3-Cr2O3 varistor ceramic substrate and the grain boundary defect state is low, and the voltage-dependent voltage VT and the nonlinear coefficient ɑ are the highest, while the leakage current IL is the smallest.