在silicon-oxide-nitride oxide-silicon(SONOS)等电荷俘获型不挥发存储器中,编程操作后注入电荷的分布会对器件的读取、擦写以及可靠性带来影响.利用电荷泵方法可以有效而准确地测量出注入电荷沿沟道方向的分布. 为了提高测试精度,在进行电荷泵测试时,采用固定低电平与固定高电平相结合的方法,分别对SONOS器件源端和漏端进行注入电荷分布的测试.通过测试,最终获得SONOS存储器在沟道热电子注入编程后的电子分布.电子分布的峰值区域在漏端附近,分布宽度在50nm左右. In charge-capture non-volatile memory such as silicon-oxide-nitride oxide-silicon (SONOS), the charge injected after programming can affect the read, erase, and reliability of the device. And accurately measure the distribution of injected charge along the channel direction.In order to improve the test accuracy, charge pump test, the fixed low level and fixed high-level combination of methods, respectively SONOS device source and drain terminal And the charge distribution is tested.After the test, the electron distribution of SONOS memory after channel hot electron injection programming is finally obtained.The peak area of ​​the electron distribution is near the drain terminal, and the distribution width is about 50 nm.