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美帝费尔查尔德公司最近研制了一种最高振荡频率为30千兆赫的砷化镓场效应晶体管。据说,这种晶体管在8千兆赫下,功率增益是8分贝;16千兆赫下,4分贝;噪声系数在4千兆赫下是3分贝。该公司使用了薄外延层工艺:在半绝缘的砷化镓衬底上淀积一层薄的掺硫外延膜(10~(17)原子/厘米~3),器件就制作在这层薄膜上面。用普通的光刻掩蔽法制做图形,但是不用掺杂法作 N 型材料的低阻接触,而用金—锗合金工艺作源和漏。栅是一种肖特基势垒结构。
The US-based Fairchild company recently developed a gallium arsenide field effect transistor with a maximum oscillation frequency of 30 gigahertz. It is said that this transistor at 8 gigahertz, the power gain is 8 dB; 16 GHz, 4 dB; noise figure at 4 GHz is 3 dB. The company uses a thin epitaxial layer process that deposits a thin, sulfur-doped epitaxial film (10-17 atoms / cm-3) on a semi-insulating gallium arsenide substrate and the device is fabricated on top of the thin film . With ordinary lithography masking the legal system to do graphics, but do not doping method for low-N-type material contact, but with gold - germanium alloy process as the source and drain. The gate is a Schottky barrier structure.