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增强型硅靶摄象管是一种目前制作难度较大、良品率又低的微光摄象器件。其主要原因是制作管内的光电面时,锑、碱金属容易污染管子,使得管子的信噪比降低,性能变差。现在制备多碱光电阴极的方法甚多,采用什么方法来制备增强型硅靶摄象管里的光电面,使之既有较高的灵敏度和好的光谱响应,又不使器件污染严重,这是许多同行所关心的问题。我们经过大量的实验和整管制作实践,从影响管子质量的诸因素中,着重考虑了增强型硅靶摄象管的信噪比这个因素。采用了一种锑、碱反复多次间断交替法来制备多碱光电阴极。此法对管子的污染小,并可以稳定地获得150～300微安/流明的积分灵敏度和好的光谱响应,且重复性好。我们称这种光电阴极为 S——25改进型光电阴极。本文试图阐述这种光电阴极在增强型硅靶摄象管里形成的基本原理和工艺过程。
Enhanced silicon target tube is a current production of difficult, low yield and low light camera device. The main reason is the production of optoelectronic surface tube, antimony, alkali metal easily contaminated pipe, making the pipe signal to noise ratio decreased performance deterioration. Now there are many ways to prepare polybasic photocathode, what method is used to prepare the photoelectric side of the enhanced silicon target camera so that it has both high sensitivity and good spectral response without serious device pollution, which Many colleagues are concerned about the issue. After a large number of experiments and the whole pipe making practice, we focus on the factors that affect the quality of the pipe, such as the signal to noise ratio of the enhanced silicon target camera. A multi-alkali photocathode was prepared by repeatedly alternating several times of antimony and alkali repeatedly. This method of small tube pollution, and can be stable to 150 ~ 300 microamperes / lm of the integral sensitivity and good spectral response, and good repeatability. We call this photocathode S-25 modified photocathode. This paper attempts to explain the photocathode in the enhanced silicon target tube formed in the basic principles and processes.