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本文介绍了用溅射法制备的a-Si_xC_(1-x):H薄膜光学带隙和电导激活能与碳含量的关系,测量了所得样品的红外吸收谱、光电子谱及折射率。对所得结果进行了初步的讨论。
In this paper, the relationship between the optical band gap of the a-Si_xC_ (1-x): H thin films prepared by sputtering and the carbon content and the infrared absorption spectrum, the photoelectron spectrum and the refractive index of the obtained samples were described. The results obtained preliminary discussion.