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本文评述了在常规的光学光刻范畴中,应用远紫外波长激光光源,制作亚微米超大规模集成电路图形方面的最新进展。从进入亚微米图形制作的远紫外激光光源的应用及适用于远紫外波长的新型抗蚀剂入手,着重概述了激光的特性和受激喇曼频移技术的原理、多层抗蚀剂工艺以及利用激光照射硅片,进行无抗蚀剂蚀刻制作微细图形的可行性。采用脉冲大功率激元激光器,并结合三层抗蚀剂工艺,分别以接触式和投影式制出了间隙为0.5微米,线宽为0.13微米的抗蚀剂图形。可以肯定,对于1～0.5微米线宽的超大规模集成电路图形的制作来说,经济实惠的光学光刻不仅是有布望的,而且也是完全可以胜任的。
In this paper, we review recent developments in the field of conventional opto-lithography using far ultraviolet wavelength laser light sources to produce sub-micron VLSI graphics. Starting with the application of deep ultraviolet laser light source into submicron patterning and the new type of resist suitable for far ultraviolet wavelength, the characteristics of laser and the principle of stimulated Raman shift are introduced emphatically. The multilayered resist process and The use of laser irradiation of silicon wafers, resist-free etching of the feasibility of making fine patterns. A pulsed high-power excimer laser was used in combination with a three-layer resist process to form a resist pattern having a gap of 0.5 μm and a line width of 0.13 μm by contact and projection respectively. To be sure, for the production of very large scale integrated circuit graphics with line widths of 1 to 0.5 microns, cost-effective optical lithography is not only predictable but also fully capable.