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本文以研制MOS型不挥发性存储器件为目的,寻求氮化硅膜的生长条件。氮化硅膜是在600～660℃下以氮气为携带气体由硅烷和氨进行气相反应而生长出来的。作者对反应气体的组分和膜的生长速度、膜的化学和物理性质等有关问题作了研究。其结果表明氮化硅膜的生长速度随氨气浓度的增加而减少。而且通过腐蚀速度、紫外吸收光谱、电容-电压等特性的测定表明硅烷/氨气的流量比不同,膜的组分也产生变化。在膜的生长反应过程中,由于硅的析出和氨的分解反应同时进行,认为膜的组分将偏离化学组分。并发现生长温度愈高,生长速度愈小,膜的致密性愈好。用于MNOS存储器件中的稳定氮化硅膜是在反应气体流量比为:SiH_4:NH_3=3:4000的组分中生长并在氨气氛中进行热处理后生成的。
In this paper, the development of MOS non-volatile memory devices for the purpose of seeking the growth conditions of silicon nitride film. The silicon nitride film is grown by gas phase reaction of silane and ammonia at a temperature of 600 to 660 ° C using nitrogen as a carrier gas. The authors studied the composition of reactive gases and the growth rate of the membrane, the chemical and physical properties of the membrane, and other related issues. The results show that the growth rate of silicon nitride film decreases with the increase of ammonia concentration. Moreover, the measurement of corrosion rate, UV absorption spectrum, and capacitance-voltage characteristics show that the silane / ammonia flow ratio is different and the composition of the membrane is also changed. During the growth of the membrane, the components of the membrane are believed to deviate from the chemical components due to the simultaneous precipitation of silicon and the ammonia decomposition reaction. And found that the higher the growth temperature, the smaller the growth rate, the better the membrane densification. The stable silicon nitride film used in the MNOS memory device was grown in a composition having a reactant gas flow ratio of SiH4: NH3 = 3: 4000 and was heat-treated in an ammonia atmosphere.