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为了降低Ⅲ族氮化物材料和器件的成本 ,必须开发大尺寸的Ⅲ族氮化物MOVPE生长的反应器。本文报道了EMCORE公司的一种带有旋转盘的立式反应器 ,其中的衬底片载盘直径为 32 5mm。每次沉积过程中 ,载盘上可以放置 2 1片 2英寸直径的衬底片。反应器的内壁通过水冷 ,其温度可保持在 5 0～ 6 0℃之间。衬底片可用电热丝加热 ,沉积中衬底载盘的旋转速度可达 1 0 0 0～ 1 5 0 0rpm。本文给出了用这种 32 5mmGaN生长系统生长的未掺杂GaN ,InGaN和 p GaN外延层的相关结果。这些结果表明 ,这种旋转盘的反应器是一种很适合大尺寸载盘的系统 ,完全满足Ⅲ族氮化物材料体系生长的要求。与在小反应器中生长的材料相比 ,用这种大反应器生长的材料具有相同的质量。这种 32 5mm的GaN反应器将使制备蓝光和绿光LED所用的Ⅲ族氮化外延材料的生产成本得到显著的降低。
In order to reduce the cost of Group III nitride materials and devices, a large size Group III nitride MOVPE grown reactor has to be developed. This paper reports EMCORE's vertical reactor with a rotating disk in which the diameter of the substrate disk is 32 mm. During each deposition process, 21 1 2-inch diameter backing sheets can be placed on the susceptor. The inner wall of the reactor is cooled by water and its temperature can be maintained between 50 and 600C. The substrate sheet can be heated with electric heating wire, and the rotation speed of the substrate carrier in the deposition can reach up to 1000 ~ 1500 rpm. This paper presents the results of the undoped GaN, InGaN and p GaN epilayers grown using this 32 mm thick GaN growth system. These results show that the rotating disk reactor is a very suitable for large size disk loading system, fully meet the group III nitride material system growth requirements. Materials grown with such a large reactor have the same mass compared to materials grown in small reactors. This 32 mm GaN reactor will significantly reduce the production costs of Group III nitride epitaxial materials used to make blue and green LEDs.