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采用放电等离子烧结方法烧制BaS:Eu片,将该片嵌入铝靶中,溅射制备BaAl_2S__4:Eu薄膜。在制备的所有薄膜中均有BaAl_2S__4:Eu存在,当嵌入的BaS:Eu片数量大于3时,还有BaAl_2S__7生成。薄膜被氧化后会产生BaAl_2O_4、BaSO_4和Al_2O_3。随着嵌入BaS:Eu片数量的增加,钡的硫代铝酸盐(包括BaAl_2S__4:Eu和BaAl_4S_7)的含量增加,而A1_2O_3和BaS的含量降低。在复合靶中嵌入更多的BaS:Eu片,薄膜中的Al和Ba的元素比趋近2.0,光的发射谱谱峰趋于470nm。因此,在复合靶中增加BaS:Eu片的数量可以得到更好的BaAl_2S__4:Eu薄膜,放电等离子烧结技术适用于合成用于溅射制备BaAl_2S__4:Eu薄膜的靶材。
BaS: Eu films were prepared by spark plasma sintering. The films were embedded in aluminum targets and sputtered to prepare BaAl_2S_4: Eu films. BaAl_2S_4: Eu exists in all the films prepared, and BaAl_2S_7 is formed when the number of embedded BaS: Eu is more than 3. The film is oxidized to produce BaAl_2O_4, BaSO_4 and Al_2O_3. With the increase of the number of BaS: Eu embedded films, the contents of barium sulfoaluminates (including BaAl_2S_4: Eu and BaAl_4S_7) increased while the contents of Al_2O_3 and BaS decreased. In the composite target more BaS: Eu intercalation, the film element Al and Ba element ratio close to 2.0, the emission peak spectrum of light tends to 470nm. Therefore, the better BaAl_2S_4: Eu thin films can be obtained by increasing the number of BaS: Eu flakes in the composite target. The spark plasma sintering technique is suitable for the synthesis of the target material for the sputtering of BaAl_2S_4: Eu thin films.