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阐述了平行光束法的原理,并指出平行光束法与 Bragg-Brentano(简称 B—B)法和 Seemann-Bohlin(简称 S-B)法的区别。笔者使用日本理学 D/mex-rBx 射线衍射系统,采用平行光束法对单晶硅基体上厚度是1.21、2.05、4.22、5.46、11.30、23.85(nm)6个金膜样品进行了测试。实验结果表明:平行光束法可测出单晶硅基体上厚度是1.21nm 金膜的(111),(200),(220),(311)4个峰,厚度是23.85nm 金膜的(111),(200),(220),(311),(222),(331),(420)7个峰。据平行光束法原理,改变入射角,X 射线的穿透深度也随之变化,可采用平行光束法研究薄膜物相的纵向分布变化。
The principle of parallel beam method is expounded, and the difference between parallel beam method and Bragg-Brentano (B-B) and Seemann-Bohlin (S-B) methods is pointed out. The author uses the Japanese Rigaku D / mex-rBx ray diffraction system, the parallel beam method on the single crystal silicon substrate thickness of 1.21,2.05,4.22,5.46,11.30,23.85 (nm) six gold film samples were tested. The experimental results show that the parallel beam method can detect the (111), (200), (220) and (311) four peaks of the gold film with a thickness of 1.21 nm on the monocrystalline silicon substrate and the thickness of ), (200), (220), (311), (222), (331) and (420). According to the principle of parallel beam method, the penetration depth of X-ray is changed by changing the incident angle. The parallel beam method can be used to study the longitudinal distribution of the film.