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最近,在半导体、电子零件等精密洗涤过程中从提高生产率,节约场所出发,利用紫外线(UV)和臭氧(O_8)的光洗涤被受到注目。由于使用比从前输出高(500W)的光源,开发了洗涤速度大幅度提高的UV-O_8洗涤装置。以下对它的原理、装置的基本组成及特征等作介绍。 1.UV-O_s洗涤原理图1所示为其原理图。作为紫外线发生源的低压水银灯,有着以253 7n m为主以及184 9n m及365n m等水银线光谱,这184.9n m的放射能被空气中的氧吸收、产生下式的臭氧及激励氧原子。 O_2—→O+O O_2+O—→O_3 产生的臭氧吸收253.7nm的放射能且作如下
Recently, attention has been paid to the light scrubbing using ultraviolet (UV) and ozone (O_8) for improving the productivity and saving space in the precision washing process of semiconductors and electronic components. Developed a UV-O_8 washer with significantly improved wash speed due to the use of a higher (500W) light source than ever before. The following describes the principle, the basic components and characteristics of the device. 1. UV-O_s washing principle Figure 1 shows its schematic. The low-pressure mercury lamp as a source of UV light has a mercury ion spectrum mainly of 253 7n m and 184 9n m and 365 nm. The 184.9 nm of radioactivity is absorbed by the oxygen in the air and ozone and excited oxygen atoms are generated. The ozone produced by O 2 - → O + O O 2 + O → O 3 absorbs 253.7 nm of radioactivity and is as follows