论文部分内容阅读
随着集成度的提高,要求芯片的线条进一步缩小,但根据按比例缩小原则,纵向尺寸也必须减小。因此VLSI要求p—n结的结深越来越浅。离子注S和快速热退火为制备这种高浓度浅p—n结提供了一种要求的手段。当然离子注入产生的辐照缺陷及其在退火过程中的行为就自然受到人们的注意。由于砷在硅中固溶度较高、扩散系数小,离子注入的平均投影射程小等一系列特点,在制备高浓度、浅N+P结方面引起了相当的重视。本文研究了砷注入硅快速热退火后缺陷的特性。即砷注入硅后经不同温度不同时间退火后的缺陷。所用的试样为6—8ΩcmP—型<100>硅片,经室温120kev砷离子注入,剂量为1×10~(16)cm~(-2),分别在900℃、1000℃、1080℃和1150℃不同时间红外退火。並利用霍尔效应和剥层技术测定载流子浓度分布,
As the degree of integration increases, the lines of the chip are required to be further reduced, but according to the principle of scaling down, the vertical size must also be reduced. Therefore, VLSI requirements p-n junction junction depth more and more shallow. Ion implantation S and rapid thermal annealing provide a desirable means of producing such high concentration shallow p-n junctions. Of course, the ion implantation defects caused by irradiation and its behavior in the annealing process naturally attracted the attention of people. Due to the high solid solubility of arsenic in silicon, the small diffusion coefficient and the small average projection range of ion implantation, a great deal of attention has been paid to the preparation of high concentration and shallow N + P junctions. In this paper, the defects of arsenic-implanted silicon after rapid thermal annealing were investigated. That is, arsenic after implantation into silicon at different temperatures after annealing at different times defects. The samples used were 6-8 Ω cm P-type <100> silicon wafer and were implanted with 120 keV arsenic ions at a dose of 1 × 10 ~ (16) cm -2 at 900 ℃, 1000 ℃, 1080 ℃ and 1150 ℃ at different times of infrared annealing. And the use of Hall effect and stripping technology for the determination of carrier concentration distribution,