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制备了有LiF插层的有机发光二极管,以八羟基喹啉铝(Alq3)作为电子传输层,N,N′-二苯基-N,N′-二(1-萘基)-1,1′-联苯-4,4′-二胺(NPB)作为空穴传输层.通过改变Alq3与NPB间LiF插层的厚度,研究了不同温度下器件的光电特性及电致发光的磁场效应.测量结果表明:LiF插层可以影响器件内部载流子的输运和激发态的形成.较厚的插层阻碍了空穴的传输,使器件的电流效率变低.但实验中发现,LiF插层可实现对器件电致发光磁场效应的有效调控.与常规器件相比,各温度下含插层器件的磁场效应在小磁场范围内(磁感应强度B<40mT)均得到增强;低温情况下,插层结构使发光强度在较大磁场范围内(B≥40mT)的下降趋势大大减弱,且插层厚度越大,该下降趋势就越不明显.这些实验结果间接说明了三重态激子的浓度可以影响电致发光的磁场效应.
An organic light-emitting diode with LiF intercalation was prepared. AlGaAs (Alq3) as electron transport layer, N, N’-diphenyl-N, ’-biphenyl-4,4’-diamine (NPB) as a hole-transporting layer.The photoelectric properties and electroluminescent magnetic field effects of the device under different temperatures were studied by changing the thickness of the LiF intercalation layer between Alq3 and NPB. The results show that LiF intercalation can influence the transport of carrier and the formation of excited states in the device, and the thicker intercalation hinders the hole transport and lowers the current efficiency of the device. However, Layer can realize the effective regulation of the electroluminescent magnetic field effect of the device.Compared with the conventional device, the magnetic field effect of the intercalated device with each temperature is enhanced in a small magnetic field (magnetic induction B <40mT); at low temperature, The intercalation structure greatly reduces the decreasing trend of luminescence intensity in a large magnetic field range (B≥40mT), and the less obvious the downward trend is as the intercalation layer thickness increases.These experimental results indirectly show that the concentration of triplet exciton Can affect the electroluminescent magnetic field effect.