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采用磁控溅射法,以镍硅合金为靶,制备了一种适用于金属诱导横向晶化的氧化物镍源——自缓释镍源.该镍源在内部构成和晶化现象上都不同于纯金属镍源.采用该镍源制备低温多晶硅材料,晶化速率不明显依赖于镍源薄膜的厚度,且晶化多晶硅膜内的残余镍量亦可有效降低,可为薄膜晶体管提供宽的工艺窗口.本文对用纯金属镍源所得多晶硅薄膜的晶化率、表面粗糙度、电学特性等与溅射条件的关系进行了研究,并对相应结果进行了讨论.
A magnetron sputtering method was used to prepare a nickel source for nickel-silicon self-sustained release, which is suitable for metal induced lateral crystallization. The nickel source has both internal structure and crystallization Different from the pure nickel source.Preparation of low temperature polysilicon using the nickel source, the crystallization rate is not significantly dependent on the thickness of the nickel source film, and the residual amount of nickel in the crystallized polysilicon film can be effectively reduced, the width of the thin film transistor can provide wide The relationship between the crystallization rate, surface roughness, electrical properties and sputtering conditions of the polycrystalline silicon thin film obtained by the pure nickel source was studied, and the corresponding results were discussed.