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为优化多量子阱结构THz量子级联激光器(QCL,quantum cascade laser)有源区的结构设计,本文运用自洽数值求解与电路建模相结合的方法研究了器件有源层注入区势垒厚度变化对器件光电及温度特性的影响。首先采用自洽数值求解获得注入区势垒厚为3.0~6.8nm器件非辐射散射时间、自激发射弛豫时间以及电子逃逸时间等描述器件有源区输运特性的重要参量;然后运用电路建模方法基于三能级速率方程建立了器件的等效电路模型;最后运用电路仿真工具PSPICE对注入区势垒厚为3.0~6.8nm器件的光电特性进行了模拟分析,并讨论了器件有源层注入区的势垒厚度参数变化对器件阈值电流、输出光功率和输入阻抗等性能参数的影响,分析结果与已报道的理论和实验结果一致,证明了通过合理优化有源区的结构参数可以进一步提高器件性能。
In order to optimize the structure design of QCL (quantum cascade laser) active region, the method of self-consistent numerical solution and circuit modeling is used to study the barrier thickness Influence of Variation on Photoelectrical and Temperature Characteristics of Devices. First of all, by using the self-consistent numerical solution, the important parameters describing the transport properties of the device active region such as the non-radiative scattering time, the self-excited emission relaxation time and the electron escape time of the barrier thickness of 3.0-6.8 nm in the implanted region are obtained. The equivalent circuit model of the device is established based on the three-level rate equation. At last, the photoelectric characteristics of the device with the barrier thickness of 3.0-6.8 nm are simulated by the PSPICE, a circuit simulation tool. Finally, the device active layer The influence of the variation of the barrier thickness of the implanted region on the performance parameters of the device such as threshold current, output optical power and input impedance is consistent with the reported theoretical and experimental results. It is proved that by optimizing the structural parameters of active region, Improve device performance.